STF6N52K3
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Краткое описание:
5A, 525V, 1.2Ω N-Channel Power MOSFET, TO-220
Дополнительная информация
N-Channel Power MOSFET featuring 525V drain-to-source breakdown voltage and 5A continuous drain current. This through-hole component offers a low 1.2-ohm drain-to-source resistance (Rds On Max) and a 3.75V threshold voltage. Designed for efficient switching, it exhibits a 10ns turn-on delay and 31ns turn-off delay, with an 18ns fall time. Maximum power dissipation is 25W, operating within a -55°C to 150°C temperature range. Packaged in TO-220AB or TO-220FP with 3 pins, this RoHS compliant device is suitable for power applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 16.4mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 670pF |
| Power Dissipation | 25W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 525V |
| Drain to Source Breakdown Voltage | 525V |
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