STF7NM50N
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Краткое описание:
500V 5A N-Channel Power MOSFET TO-220 780mR RdsOn
Дополнительная информация
N-Channel Power MOSFET, TO-220-3 package, offering 500V drain-source breakdown voltage and 5A continuous drain current. Features a low 780mΩ drain-source on-resistance at a nominal 3V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 20W. Includes a 9ns fall time and 40ns turn-off delay time, with 400pF input capacitance. This RoHS compliant component is designed for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 780mR |
| Nominal Vgs | 3V |
| Termination | Through Hole |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 20W |
| Dual Supply Voltage | 500V |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 20W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 780mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 780mR |
| Drain to Source Breakdown Voltage | 500V |
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