STF7NM80

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STF7NM80 - Stmicroelectronics
Краткое описание: 800V 6.5A N-CH MOSFET TO-220FP 1.05R
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MDmesh™ Power MOSFET, 800V drain-to-source breakdown voltage, 6.5A continuous drain current, and 1.05 Ohm typical drain-to-source resistance. Features include 20ns turn-on delay, 35ns turn-off delay, and 10ns fall time. This through-hole component is housed in a TO-220FP package with a maximum power dissipation of 25W and an operating temperature range of -55°C to 150°C.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 10ns
Packaging Rail/Tube
Rds On Max 1.05R
Nominal Vgs 4V
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 620pF
Power Dissipation 25W
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 35ns
Reach SVHC Compliant No
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 1.05R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 6.5A
Drain to Source Voltage (Vdss) 800V
Drain to Source Breakdown Voltage 800V

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