STF9NM60N

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STF9NM60N - Stmicroelectronics
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Краткое описание: 600V N-CH MOSFET, 6.5A, 745mR, TO-220FP
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 745mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package with a maximum power dissipation of 25W. Includes fast switching characteristics with turn-on delay of 28ns and fall time of 26.7ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 16.4mm
Length 10.4mm
Series MDmesh™
Polarity N-CHANNEL
Fall Time 26.7ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 745mR
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 452pF
Power Dissipation 25W
Threshold Voltage 3V
Turn-On Delay Time 28ns
Radiation Hardening No
Turn-Off Delay Time 52.5ns
Reach SVHC Compliant No
Max Power Dissipation 25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 745mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 6.5A
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 745MR
Drain to Source Breakdown Voltage 600V

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