STFI24N60M2

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STFI24N60M2 - Stmicroelectronics
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Краткое описание: 600V 18A N-CH MOSFET TO-262 168mR Rds(on)
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. Offers a low 0.168 Ohm typical drain-source resistance, with a maximum of 0.190 Ohm. Designed for through-hole mounting in a TO-262-3 package, this component operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 30W. Key switching characteristics include a 14ns turn-on delay and a 15ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 10.85mm
Length 10.4mm
Series Mdmesh II Plus™
Polarity N-CHANNEL
Fall Time 15ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 190mR
Package/Case TO-262-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 1.06nF
Power Dissipation 30W
Turn-On Delay Time 14ns
Radiation Hardening No
Turn-Off Delay Time 60ns
Max Power Dissipation 30W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 168mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 18A
Drain to Source Voltage (Vdss) 600V
Drain to Source Breakdown Voltage 600V

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