STFI31N65M5
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Краткое описание:
650V N-CH MOSFET 22A 124mR TO-262FP Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. Offers low 124mΩ typical drain-source resistance at 10Vgs. Designed for through-hole mounting in a TO-262-3 package, this component boasts fast switching characteristics with a 8.5ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 30W.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 10.85mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 8.5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 148mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.865nF |
| Power Dissipation | 30W |
| Turn-On Delay Time | 46ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 11ns |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 124mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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