STFI7N80K5
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Краткое описание:
800V N-CH MOSFET, 6A, 1.2Ω, TO-262, Power
Дополнительная информация
N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 6A continuous drain current. This component offers a typical on-resistance of 0.95 Ohm and a maximum of 1.2 Ohm, with a maximum power dissipation of 25W. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a fall time of 20.2ns, turn-off delay of 23.7ns, and turn-on delay of 11.3ns, with an input capacitance of 360pF. This RoHS compliant device is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 10.85mm |
| Length | 10.4mm |
| Series | SuperMESH5™ |
| Weight | 0.079014oz |
| Polarity | N-CHANNEL |
| Fall Time | 20.2ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 360pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 11.3ns |
| Turn-Off Delay Time | 23.7ns |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain to Source Breakdown Voltage | 800V |
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