STGD10HF60KDT4

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STGD10HF60KDT4 - Stmicroelectronics
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Краткое описание: 600V 20A N-CH IGBT DPAK Transistor
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel IGBT chip for surface mount applications, featuring a 600V collector-emitter voltage and 20A continuous collector current. This single IGBT is housed in a DPAK (TO-252AA) package with a gull-wing lead shape, offering a maximum power dissipation of 80000mW. Operating across a wide temperature range from -40°C to 175°C, it includes a tab for enhanced thermal performance.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-252AA
EU RoHS Yes with Exemption
Mounting Surface Mount
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Type N
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3(Max)
Package Material Plastic
Package Width (mm) 6.2(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.4(Max)
Package Length (mm) 6.6(Max)
Seated Plane Height (mm) 2.63(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 80000mW
Min Operating Temperature -40°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 600V
Maximum Continuous Collector Current 20A
Typical Collector Emitter Saturation Voltage 2V

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