STGD10NC60ST4

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STGD10NC60ST4 - Stmicroelectronics
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Краткое описание: 600V 18A N-CH IGBT DPAK Transistor
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) chip for surface mounting in a TO-252 DPAK package. Features a 600V collector-emitter voltage, 18A continuous collector current, and 60W maximum power dissipation. This single IGBT offers a typical collector-emitter saturation voltage of 1.45V and operates across a wide temperature range from -55°C to 150°C. The 3-pin DPAK package with gull-wing leads is designed for efficient heat dissipation via its tab.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-252AA
EU RoHS Yes with Exemption
Mounting Surface Mount
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Gull-wing
Schedule B 8541290080
Channel Type N
Package/Case DPAK
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3(Max)
Package Material Plastic
Package Width (mm) 6.2(Max)
Package Description Deca Watt Package
Package Family Name TO-252
Package Height (mm) 2.4(Max)
Package Length (mm) 6.6(Max)
Radiation Hardening No
Seated Plane Height (mm) 2.63(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 60000mW
Min Operating Temperature -55°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 600V
Maximum Continuous Collector Current 18A
Typical Collector Emitter Saturation Voltage 1.45V

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