STGD6NC60H-1

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STGD6NC60H-1 - Stmicroelectronics
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Краткое описание: 600V 15A TO-251-3 PowerMESH IGBT
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGD6NC60H-1 is a 600V insulated gate bipolar transistor with a maximum collector current of 15A. It features a TO-251-3 package and is designed for high-power applications. The device operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. With a maximum power dissipation of 62.5W, this IGBT is suitable for demanding power management systems.
RoHS Compliant
Mount Through Hole
Series PowerMESH™
Weight 0.139332oz
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-251-3
RoHS Compliant Yes
Package Quantity 75
Max Breakdown Voltage 600V
Max Collector Current 15A
Max Power Dissipation 62.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.9V

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