STGD7NB120ST4

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STGD7NB120ST4 - Stmicroelectronics
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Краткое описание: IGBT Single 1200V 10A 55W TO-251
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STGD7NB120ST4 is a single insulated gate bipolar transistor with a maximum collector-emitter voltage of 1200V and a maximum continuous collector current of 10A. It has a typical collector-emitter saturation voltage of 1.7V and a maximum power dissipation of 55W. The device is packaged in a TO-251 IPAK with a maximum package length of 6.6mm and a maximum package width of 2.4mm. It is designed for through-hole mounting and has an operating temperature range of -65°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Type N
Package/Case IPAK
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.3(Max)
Package Material Plastic
Package Width (mm) 2.4(Max)
Package Family Name TO-251
Package Height (mm) 6.2(Max)
Package Length (mm) 6.6(Max)
Radiation Hardening No
Seated Plane Height (mm) 8.4(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 55000mW
Min Operating Temperature -65°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 1200V
Maximum Continuous Collector Current 10A
Typical Collector Emitter Saturation Voltage 1.7V

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