STGF10HF60KD

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STGF10HF60KD - Stmicroelectronics
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Краткое описание: 600V 9A N-CH IGBT TO-220FP Transistor
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) chip featuring 600V collector-emitter voltage and 9A continuous collector current. This single IGBT is housed in a TO-220FP package with 3 pins and a tab, designed for through-hole mounting. It offers a maximum power dissipation of 30000mW and operates across a temperature range of -40°C to 175°C. The package dimensions are 10.4mm (L) x 4.6mm (W) x 16.4mm (H).
PCB 3
Tab Tab
ECCN EAR99
EU RoHS Yes with Exemption
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive Yes
Lead Shape Through Hole
Schedule B 8541290080
Channel Type N
Package/Case TO-220FP
AEC Qualified Yes
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.7(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 2.04
Package Width (mm) 4.6(Max)
Package Description Transistor Outline Package Fullpak
Package Family Name TO-220
Package Height (mm) 16.4(Max)
Package Length (mm) 10.4(Max)
Seated Plane Height (mm) 20(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 30000mW
Min Operating Temperature -40°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 600V
Maximum Continuous Collector Current 9A
Typical Collector Emitter Saturation Voltage 2V

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