STGF10NC60SD
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Краткое описание:
600V 10A N-CH IGBT TO-220FP Transistor
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for through-hole mounting. Features a 600V collector-emitter voltage and 10A continuous collector current. Maximum power dissipation is 25000mW with a typical collector-emitter saturation voltage of 1.45V. Packaged in a TO-220FP configuration with 3 pins and a tab, offering a wide operating temperature range from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Type | N |
| Package/Case | TO-220FP |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Pin Pitch (mm) | 2.7(Max) |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Weight (g) | 2.04 |
| Package Width (mm) | 4.6(Max) |
| Package Description | Transistor Outline Package Fullpak |
| Package Family Name | TO-220 |
| Package Height (mm) | 16.4(Max) |
| Package Length (mm) | 10.4(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 20(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Continuous Collector Current | 10A |
| Typical Collector Emitter Saturation Voltage | 1.45V |
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