STGF14HF60KD

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STGF14HF60KD - Stmicroelectronics
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Краткое описание: 600V 11A N-CH IGBT TO-220FP Transistor
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for through-hole mounting. Features a 600V collector-emitter voltage and 11A continuous collector current. Offers a maximum power dissipation of 33000mW and a typical collector-emitter saturation voltage of 2.1V. Encased in a TO-220FP package with 3 pins and a tab, operating within a temperature range of -40°C to 175°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
EU RoHS Yes
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Type N
Package/Case TO-220FP
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 2.7(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 2.04
Package Width (mm) 4.6(Max)
Package Description Transistor Outline Package Fullpak
Package Family Name TO-220
Package Height (mm) 16.4(Max)
Package Length (mm) 10.4(Max)
Seated Plane Height (mm) 20(Max)
Max Operating Temperature 175°C
Maximum Power Dissipation 33000mW
Min Operating Temperature -40°C
Maximum Gate Emitter Voltage ±20V
Maximum Collector-Emitter Voltage 600V
Maximum Continuous Collector Current 11A
Typical Collector Emitter Saturation Voltage 2.1V

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