STGPL6NC60D

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STGPL6NC60D - Stmicroelectronics
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Краткое описание: IGBT 600V 42A 56W TO-220-3 Through Hole
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGPL6NC60D is a 600V insulated gate bipolar transistor with a maximum collector current of 42A and a maximum power dissipation of 56W. It is packaged in a TO-220-3 flange mount package and is suitable for through hole mounting. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. The device is not radiation hardened and has a reverse recovery time of 50ns.
RoHS Compliant
Mount Through Hole
Series PowerMESH™
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-220-3
RoHS Compliant Yes
Package Quantity 1
Radiation Hardening No
Max Breakdown Voltage 600V
Max Collector Current 42A
Max Power Dissipation 56W
Reverse Recovery Time 50ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.9V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V

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