STGW25H120F
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Краткое описание:
IGBT Transistor N-CH 1200V 50A TO-247
Дополнительная информация
N-channel Insulated Gate Bipolar Transistor (IGBT) for high-voltage applications. Features a 1200V collector-emitter voltage and 50A continuous collector current. This single IGBT chip is housed in a TO-247 package with 3 pins and a tab, designed for through-hole mounting. Maximum power dissipation reaches 330000mW, with a typical collector-emitter saturation voltage of 2.15V. Operates across a wide temperature range from -55°C to 150°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-247 |
| EU RoHS | Yes |
| Mounting | Through Hole |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Type | N |
| Package/Case | TO-247 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.15(Max) |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 20.15(Max) |
| Package Length (mm) | 15.75(Max) |
| Seated Plane Height (mm) | 24.45(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 330000mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Collector-Emitter Voltage | 1200V |
| Maximum Continuous Collector Current | 50A |
| Typical Collector Emitter Saturation Voltage | 2.15V |
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