STGW25H120F2

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STGW25H120F2 - Stmicroelectronics
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Краткое описание: IGBT 1200V 50A 375W TO-247-3 Through Hole
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGW25H120F2 is a 1200V insulated gate bipolar transistor with a maximum collector current of 50A and a maximum power dissipation of 375W. It is packaged in a TO-247-3 flange mount and is available in a rail/tube packaging configuration. The device is RoHS compliant and has a lead-free construction. It operates over a temperature range of -55°C to 175°C.
RoHS Compliant
Mount Through Hole
Weight 1.340411oz
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Max Collector Current 50A
Max Power Dissipation 375W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.6V
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.1V

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