STGW35NC60WD

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STGW35NC60WD - Stmicroelectronics
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Краткое описание: 600V 70A TO-247-3 PowerMESH IGBT
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGW35NC60WD is a 600V insulated gate bipolar transistor with a maximum collector current of 70A. It features a TO-247-3 package and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The maximum power dissipation is 260W, and the reverse recovery time is 40ns.
RoHS Compliant
Mount Through Hole
Series PowerMESH™
Packaging Rail/Tube
Input Type STANDARD
Termination Through Hole
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 250W
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 70A
Max Power Dissipation 260W
Reverse Recovery Time 40ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.6V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V