STGW40H65DFB

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STGW40H65DFB - Stmicroelectronics
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Краткое описание: 650V 80A TO-247-3 IGBT
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

The STGW40H65DFB is a 650V insulated gate bipolar transistor with a maximum collector current of 80A. It is packaged in a TO-247-3 case and is designed for through-hole mounting. The device has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 283W. The STGW40H65DFB is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.15mm
Height 20.15mm
Length 15.75mm
Weight 1.340411oz
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Max Collector Current 80A
Max Power Dissipation 283W
Reverse Recovery Time 62ns
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2V
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.8V

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