STGW40NC60V

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STGW40NC60V - Stmicroelectronics
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Краткое описание: 600V 50A 260W TO-247 IGBT Transistor
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STGW40NC60V is a 600V insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a collector-emitter saturation voltage of 2.5V. It can handle a maximum collector current of 80A and a maximum power dissipation of 260W. The device is packaged in a TO-247 case and is suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C, and the device is compliant with RoHS regulations.
RoHS Compliant
Mount Through Hole
Series PowerMESH™
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247
Current Rating 50A
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 30
Power Dissipation 260W
Turn-On Delay Time 43ns
Radiation Hardening No
Turn-Off Delay Time 170ns
Reach SVHC Compliant No
Max Collector Current 80A
Max Power Dissipation 260W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V

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