STGW40NC60W

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STGW40NC60W - Stmicroelectronics
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Краткое описание: IGBT 600V 70A 250W TO-247-3
Производитель Stmicroelectronics
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

The STGW40NC60W is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 70A. It has a maximum power dissipation of 250W and is packaged in a TO-247-3 case with a through-hole mount. The transistor is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
RoHS Compliant
Mount Through Hole
Series PowerMESH™
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 30
Power Dissipation 205W
Turn-On Delay Time 33ns
Turn-Off Delay Time 213ns
Max Collector Current 70A
Max Power Dissipation 250W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V

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