STGWT60H65FB
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Краткое описание:
IGBT 650V 80A 375W Through Hole
Дополнительная информация
The STGWT60H65FB is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 650V and a maximum collector current of 80A. It has a maximum power dissipation of 375W and operates within a temperature range of -40°C to 175°C. The device is packaged in a through-hole configuration and is compliant with RoHS regulations. The transistor is designed for use in high-power applications and is manufactured by STmicroelectronics.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 20.1mm |
| Length | 15.8mm |
| Weight | 0.238311oz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Radiation Hardening | No |
| Max Collector Current | 80A |
| Max Power Dissipation | 375W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 2.3V |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.6V |
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