STGWT60V60DF
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Краткое описание:
IGBT 600V 80A 375W Through Hole
Дополнительная информация
The STGWT60V60DF is a 600V insulated gate bipolar transistor with a maximum collector current of 80A and a maximum power dissipation of 375W. It is packaged in a through-hole configuration and is compliant with RoHS regulations. The device operates over a temperature range of -55°C to 175°C and has a reverse recovery time of 74ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.7mm |
| Height | 26.7mm |
| Length | 15.7mm |
| Series | STGWT60V60DF |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Power Dissipation | 375W |
| Turn-On Delay Time | 60ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 208ns |
| Max Collector Current | 80A |
| Max Power Dissipation | 375W |
| Reverse Recovery Time | 74ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.3V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
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