STH110N10F7-2
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Краткое описание:
N-Channel MOSFET 100V 110A 6.5mR H2PAK-2
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and 110A continuous drain current. Offers a low 4.9 mOhm typical drain-source on-resistance. Designed for surface mounting in a TO-263-3 (H2PAK-2) package, this component operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 150W. Includes fast switching characteristics with turn-on delay of 25ns and turn-off delay of 52ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.8mm |
| Length | 15.8mm |
| Series | DeepGATE™, STripFET™ VII |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.5mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 5.117nF |
| Power Dissipation | 150W |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 52ns |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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