STH140N8F7-2
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Краткое описание:
N-Ch MOSFET 80V 90A 4mR H2PAK-2 SMT
Дополнительная информация
N-channel power MOSFET featuring 80V drain-source breakdown voltage and 90A continuous drain current. Offers low 3.3 mOhm typical drain-source on-resistance. Designed for surface mounting in an H2PAK-2 (TO-263-3) package, this component boasts a maximum power dissipation of 200W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 26ns turn-on delay and 44ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 15.8mm |
| Height | 4.8mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 44ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 6.34nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 26ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 82ns |
| Max Power Dissipation | 200W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain to Source Breakdown Voltage | 80V |
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