STH150N10F7-2
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Краткое описание:
N-Ch MOSFET 100V 110A 3.9mR H2PAK-2 SMT
Дополнительная информация
N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 3.9mΩ typical drain-source on-resistance. This surface-mount device offers a continuous drain current of 110A and a maximum power dissipation of 250W, operating across a wide temperature range of -55°C to 175°C. Designed for efficient switching, it exhibits fast switching times with a turn-on delay of 33ns and a fall time of 33ns. The component is housed in a TO-263-3 (H2PAK-2) package, is RoHS compliant, and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.57mm |
| Height | 4.8mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VII |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 33ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.9mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 8.115nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 33ns |
| Turn-Off Delay Time | 72ns |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.9mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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