STH180N10F3-6
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Краткое описание:
100V 180A N-CH MOSFET TO-263-7 4.5mR 315W SM
Дополнительная информация
N-Channel Power MOSFET, TO-263-7 package, offering 100V drain-source breakdown voltage and 180A continuous drain current. Features low 4.5mR drain-source on-resistance and 315W maximum power dissipation. Operates from -55°C to 175°C with a 2V threshold voltage. Includes fast switching characteristics with 25.6ns turn-on and 6.9ns fall times. Surface mount design, RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.8mm |
| Length | 15.25mm |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 6.9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.5mR |
| Package/Case | TO-263-7 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 6.665nF |
| Power Dissipation | 315W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 25.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 99.9ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 315W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.5MR |
| Drain to Source Breakdown Voltage | 100V |
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