STH210N75F6-2
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Краткое описание:
N-CH MOSFET 75V 180A 2.8mR TO-263-3 SM
Дополнительная информация
N-channel MOSFET, 75V Drain to Source Breakdown Voltage, 180A Continuous Drain Current, and 2.8mΩ Max Drain-Source On-Resistance. Features a 300W Max Power Dissipation and operates within a -55°C to 175°C temperature range. Surface mountable in a TO-263-3 package, this component offers fast switching with a 34ns Turn-On Delay Time and 71ns Fall Time. RoHS compliant and Lead Free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.8mm |
| Length | 15.8mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 71ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.8mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 11.8nF |
| Power Dissipation | 300W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 34ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 154ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 2.8MR |
| Drain to Source Breakdown Voltage | 75V |
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