STH320N4F6-2
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
N-Channel MOSFET, 40V, 200A, 1.3mR, H2PAK-2, Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 200A continuous drain current. Offers low 1.1 mOhm typical drain-source on-resistance and a maximum of 1.3 mR. Designed for surface mounting in a TO-263-3 (H2PAK-2) package, this component boasts a maximum operating temperature of 175°C and a power dissipation of 300W. Key switching characteristics include a 28ns turn-on delay and 95ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.8mm |
| Length | 15.8mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Packaging | Tape and Reel |
| Rds On Max | 1.3mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 13.8nF |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 190ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
