STI13NM60N
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Краткое описание:
600V N-Channel MOSFET, 11A, 360mR RdsOn, I2PAK
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers a low 280mOhm typical drain-source on-resistance, with a maximum of 360mR. Designed for through-hole mounting in an I2PAK package, it operates across a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 90W. Key switching characteristics include a 3ns turn-on delay and 10ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 10.75mm |
| Length | 10.4mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 360mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 790pF |
| Power Dissipation | 90W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 360mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 360MR |
| Drain to Source Breakdown Voltage | 600V |
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