STI16N65M5
Снят с производства
Увеличить
Краткое описание:
N-Channel Power MOSFET, 650V, 12A, 230mR, TO-262
Дополнительная информация
N-channel Power MOSFET with 650V drain-source breakdown voltage and 12A continuous drain current. Features 230mΩ drain-source resistance at 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 90W. Packaged in TO-262-3 for through-hole mounting. RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Packaging | Rail/Tube |
| Rds On Max | 279mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.25nF |
| Power Dissipation | 25W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 230mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
