STI260N6F6
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Краткое описание:
60V 120A 3mR N-CH Power MOSFET TO-262-3
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-262-3 package, this RoHS compliant component operates from -55°C to 175°C with a maximum power dissipation of 300W. Key switching characteristics include a turn-on delay time of 31.4ns and a fall time of 62.6ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 10.75mm |
| Length | 10.4mm |
| Series | STripFET™ DeepGATE™ |
| Polarity | N-CHANNEL |
| Fall Time | 62.6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 11.4nF |
| Power Dissipation | 300W |
| Number of Elements | 1 |
| Turn-On Delay Time | 31.4ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 144.4ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 3MR |
| Drain to Source Breakdown Voltage | 60V |
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