N-channel MOSFET featuring 40V drain-source breakdown voltage and 2.1 mOhm typical drain-source resistance. This power MOSFET offers a continuous drain current of 120A and a maximum power dissipation of 330W. Designed for through-hole mounting, it utilizes an I2PAK package with dimensions of 10.75mm height, 10.4mm length, and 4.6mm width. Operating temperature range spans from -55°C to 175°C, with fast switching characteristics including a 22ns turn-on delay and 45ns fall time.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.6mm |
| Height |
10.75mm |
| Length |
10.4mm |
| Series |
STripFET™ III |
| Polarity |
N-CHANNEL |
| Fall Time |
45ns |
| Packaging |
Rail/Tube |
| Rds On Max |
2.6mR |
| Package/Case |
TO-262-3 |
| RoHS Compliant |
Yes |
| Package Quantity |
50 |
| Input Capacitance |
7.4nF |
| Power Dissipation |
330W |
| Threshold Voltage |
4V |
| Turn-On Delay Time |
22ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
110ns |
| Reach SVHC Compliant |
No |
| Max Power Dissipation |
330W |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Drain to Source Resistance |
2.6mR |
| Gate to Source Voltage (Vgs) |
20V |
| Continuous Drain Current (ID) |
120A |
| Drain to Source Voltage (Vdss) |
40V |
| Drain to Source Breakdown Voltage |
40V |