STI270N4F3

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Краткое описание: N-CH MOSFET 40V 120A 2.6mR TO-262 PowerMOSFET
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel MOSFET featuring 40V drain-source breakdown voltage and 2.1 mOhm typical drain-source resistance. This power MOSFET offers a continuous drain current of 120A and a maximum power dissipation of 330W. Designed for through-hole mounting, it utilizes an I2PAK package with dimensions of 10.75mm height, 10.4mm length, and 4.6mm width. Operating temperature range spans from -55°C to 175°C, with fast switching characteristics including a 22ns turn-on delay and 45ns fall time.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 10.75mm
Length 10.4mm
Series STripFET™ III
Polarity N-CHANNEL
Fall Time 45ns
Packaging Rail/Tube
Rds On Max 2.6mR
Package/Case TO-262-3
RoHS Compliant Yes
Package Quantity 50
Input Capacitance 7.4nF
Power Dissipation 330W
Threshold Voltage 4V
Turn-On Delay Time 22ns
Radiation Hardening No
Turn-Off Delay Time 110ns
Reach SVHC Compliant No
Max Power Dissipation 330W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 2.6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 40V
Drain to Source Breakdown Voltage 40V