STI300N4F6
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Краткое описание:
N-Ch MOSFET 40V 160A 1.7mR I2PAK Power Transistor
Дополнительная информация
N-channel STripFET F6 Power MOSFET featuring 40V drain-source breakdown voltage and low 1.7 mOhm typical drain-source resistance. This component offers a continuous drain current of 160A and a maximum power dissipation of 300W. Designed for through-hole mounting in an I2PAK package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 28ns turn-on delay and a 95ns fall time, with input capacitance at 13.8nF. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.35mm |
| Length | 10.4mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.2mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 13.8nF |
| Turn-On Delay Time | 28ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 190ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
