STI30N65M5
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Краткое описание:
650V 22A N-CH MOSFET TO-262 139mR Power Transistor
Дополнительная информация
N-Channel Power MOSFET, 650V Drain to Source Voltage, 22A Continuous Drain Current, and 139mΩ Max Drain to Source Resistance. Features a 4V Threshold Voltage, 2.88nF Input Capacitance, and 140W Max Power Dissipation. Packaged in a TO-262-3 (I2PAK) through-hole mount configuration, this RoHS compliant component offers fast switching with 50ns turn-on and turn-off delay times. Operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 10.75mm |
| Length | 10.4mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Packaging | Rail/Tube |
| Rds On Max | 139mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 2.88nF |
| Power Dissipation | 140W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 50ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 50ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 140W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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