STI6N62K3
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
620V 5.5A N-Ch MOSFET, 0.95 Ohm, I2PAK, SuperMESH3
Дополнительная информация
N-channel SuperMESH3™ Power MOSFET featuring 620V Drain-to-Source Voltage (Vdss) and 5.5A Continuous Drain Current (ID). This through-hole component offers a low 0.95 Ohm (typical) on-resistance and a maximum power dissipation of 90W. It operates within a temperature range of -55°C to 150°C and is housed in a TO-262-3 package. Key switching characteristics include a 20ns fall time, 22ns turn-on delay, and 49ns turn-off delay, with a nominal gate-source voltage of 3.75V. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 10.75mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.2R |
| Nominal Vgs | 3.75V |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 875pF |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 49ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 90W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 620V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
