STK850
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Краткое описание:
30V 30A N-CH MOSFET 2.9mR RdsOn Si Power SMD
Дополнительная информация
N-Channel Power MOSFET featuring 30A continuous drain current and 30V drain-to-source breakdown voltage. Offers a low 2.9mΩ maximum drain-source on-resistance at a nominal 2.5V Vgs. Designed for surface mount applications with a 5.2W maximum power dissipation and operating temperature range of -55°C to 150°C. Includes a 13ns fall time and 31ns turn-off delay time, with 3.15nF input capacitance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.9mR |
| Nominal Vgs | 2.5V |
| Termination | SMD/SMT |
| Current Rating | 30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 3.15nF |
| Power Dissipation | 5.2W |
| Dual Supply Voltage | 30V |
| Turn-Off Delay Time | 31ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 5.2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.9mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 2.9mR |
| Drain to Source Breakdown Voltage | 30V |
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