STL110N10F7

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STL110N10F7 - Stmicroelectronics(STMicroelectronics)
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Краткое описание: N-Ch MOSFET 100V 107A 6mR PowerFLAT 5x6 SM
Производитель Stmicroelectronics(STMicroelectronics)
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 6mΩ maximum drain-source on-resistance. Delivers 107A continuous drain current with a 5W maximum power dissipation. Designed for surface mounting in a 5x6 PowerFLAT package, this component offers fast switching characteristics with a 21ns fall time, 25ns turn-on delay, and 52ns turn-off delay. Operating temperature range spans from -55°C to 175°C, with lead-free and RoHS compliance.
RoHS Compliant
Mount Surface Mount
Width 6.35mm
Height 0.95mm
Length 5.4mm
Series DeepGATE™, STripFET™ VII
Polarity N-CHANNEL
Fall Time 21ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 6mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 5.117nF
Power Dissipation 5W
Number of Elements 1
Turn-On Delay Time 25ns
Turn-Off Delay Time 52ns
Max Power Dissipation 5W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 6mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 107A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 6mR
Drain to Source Breakdown Voltage 100V

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