STL38N65M5

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STL38N65M5 - Stmicroelectronics
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Краткое описание: 650V N-CH MOSFET, 22.5A, 105mR Rds(on), PowerFLAT 8x8 HV
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 22.5A continuous drain current. Offers a low 105mΩ typical drain-source on-resistance. Designed for surface mounting in an 8x8mm PowerFLAT HV package with a height of 0.95mm. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 13ns fall time.
RoHS Compliant
Mount Surface Mount
Width 8mm
Height 0.95mm
Length 8mm
Series MDmesh™ V
Polarity N-CHANNEL
Fall Time 13ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 105mR
RoHS Compliant Yes
Package Quantity 3000
Input Capacitance 3nF
Power Dissipation 2.8W
Number of Elements 1
Turn-On Delay Time 66ns
Radiation Hardening No
Turn-Off Delay Time 9ns
Max Power Dissipation 2.8W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 105mR
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 22.5A
Drain to Source Voltage (Vdss) 650V
Drain-source On Resistance-Max 105mR
Drain to Source Breakdown Voltage 650V

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