STL65N3LLH5
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Краткое описание:
65A, 30V, 5.8mR N-CH Power MOSFET, SMD
Дополнительная информация
N-CHANNEL POWER MOSFET with 30V Drain to Source Breakdown Voltage and 65A Continuous Drain Current. Features 5.8mΩ Max Drain to Source On Resistance at a nominal 1V Gate to Source Voltage. Operates from -55°C to 150°C with 60W Max Power Dissipation. This surface mount component offers a 4.75mm length, 5.75mm width, and 0.88mm height, packaged on tape and reel. RoHS compliant with 4.5ns fall time and 9.3ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.75mm |
| Height | 0.88mm |
| Length | 4.75mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 4.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 5.8mR |
| Nominal Vgs | 1V |
| Termination | SMD/SMT |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.5nF |
| Power Dissipation | 60W |
| Threshold Voltage | 1V |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.3ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22.7ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.8mR |
| Gate to Source Voltage (Vgs) | 22V |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.8mR |
| Drain to Source Breakdown Voltage | 30V |
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