STN1HNK60

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Краткое описание: 600V 1A N-CH MOSFET SOT-223 SuperMESH Power
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 1A continuous drain current, and 8.5 Ohm maximum drain-source on-resistance. Features a SOT-223 surface mount package, 3.3W power dissipation, and operates within a -55°C to 150°C temperature range. Includes 6.5ns turn-on delay and 19ns turn-off delay. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.8mm
Length 6.5mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 25ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 8.5R
Nominal Vgs 3V
Package/Case SOT-223
Current Rating 400mA
RoHS Compliant Yes
DC Rated Voltage 600V
Package Quantity 4000
Input Capacitance 156pF
Power Dissipation 3.3W
Threshold Voltage 3V
Number of Elements 1
Turn-On Delay Time 6.5ns
Radiation Hardening No
Turn-Off Delay Time 19ns
Reach SVHC Compliant No
Max Power Dissipation 3.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 8.5R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 400mA
Drain to Source Voltage (Vdss) 600V
Drain-source On Resistance-Max 8.5R
Drain to Source Breakdown Voltage 600V

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