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Краткое описание:
200V 1A N-CH MOSFET, 1.5R, SOT-223, SM
Дополнительная информация
N-Channel Power MOSFET featuring 200V Drain to Source Breakdown Voltage and 1A Continuous Drain Current. Offers 1.5 Ohm On-State Resistance (Rds On Max) and 2.9W Max Power Dissipation. Designed for surface mount applications in a SOT-223 package, this RoHS compliant component boasts a 3V Threshold Voltage and fast switching times with a 6ns Turn-On Delay and 5ns Fall Time. Operating temperature range spans from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.5mm |
| Height | 1.8mm |
| Length | 6.5mm |
| Series | MESH OVERLAY™ |
| Current | 1A |
| Voltage | 200V |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.5R |
| Nominal Vgs | 3V |
| Package/Case | SOT-223 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 206pF |
| Power Dissipation | 2.9W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | 200V |
| On-State Resistance | 1.5R |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.9W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.5R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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