STN1NK80Z

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STN1NK80Z - Stmicroelectronics
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Краткое описание: 800V N-CH MOSFET SOT-223 0.25A 16R
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET, 800V drain-source breakdown voltage, 250mA continuous drain current, and 16 Ohm typical drain-source on-resistance. Features Zener protection, 8ns turn-on delay, 22ns turn-off delay, and 55ns fall time. Housed in a SOT-223 surface-mount package with 2.5W power dissipation. Operates from -55°C to 150°C, with 3.75V threshold voltage and 160pF input capacitance. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.8mm
Length 6.5mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 55ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 16R
Package/Case SOT-223
Current Rating 250mA
RoHS Compliant Yes
DC Rated Voltage 800V
Package Quantity 1
Input Capacitance 160pF
Power Dissipation 2.5W
Threshold Voltage 3.75V
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 8ns
Radiation Hardening No
Turn-Off Delay Time 22ns
Reach SVHC Compliant No
Max Power Dissipation 2.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 16R
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 250mA
Drain to Source Voltage (Vdss) 800V
Drain-source On Resistance-Max 16R
Drain to Source Breakdown Voltage 800V