STN2NF10

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STN2NF10 - Stmicroelectronics
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Краткое описание: N-Ch MOSFET, 100V, 2.4A, 260mR, SOT-223
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel STripFET™ II POWER MOSFET, 100V drain-source breakdown voltage, 2.4A continuous drain current, and 260mΩ maximum drain-source on-resistance. Features a 4V threshold voltage, 20V gate-to-source voltage, and 3.3W maximum power dissipation. Packaged in a SOT-223 surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 6ns and fall time of 3ns. Operating temperature range from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 3.5mm
Height 1.8mm
Length 6.5mm
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 3ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 260mR
Package/Case SOT-223
Current Rating 2A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 4000
Input Capacitance 280pF
Power Dissipation 3.3W
Threshold Voltage 4V
Number of Elements 1
Turn-On Delay Time 6ns
Radiation Hardening No
Turn-Off Delay Time 20ns
Reach SVHC Compliant No
Max Power Dissipation 3.3W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 260mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.4A
Drain to Source Voltage (Vdss) 100V
Drain-source On Resistance-Max 260mR
Drain to Source Breakdown Voltage 100V

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