STN3P6F6
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Краткое описание:
P-CH 60V 3A SOT-223 Power MOSFET
Дополнительная информация
P-channel JFET, SOT-223 package, featuring 60V drain-source breakdown voltage and 3A continuous drain current. Offers low on-resistance with a maximum of 130mΩ at 10V/10A. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 2.6W. Includes fast switching characteristics with turn-on delay of 6.4ns and fall time of 3.7ns. Surface mountable with tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.8mm |
| Length | 6.7mm |
| Series | DeepGATE™, STripFET™ VI |
| Polarity | P-CHANNEL |
| Fall Time | 3.7ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 160mR |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Input Capacitance | 340pF |
| Power Dissipation | 2.6W |
| Threshold Voltage | -4V |
| Turn-On Delay Time | 6.4ns |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 2.6W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 160mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 130MR |
| Drain to Source Breakdown Voltage | 60V |
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