NPN silicon bipolar junction transistor designed for power applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 30V. Operates with a transition frequency of 100MHz and offers a minimum DC current gain (hFE) of 100. Packaged in a SOT-223 surface-mount case, this RoHS compliant component is suitable for demanding electronic circuits.
| RoHS |
Compliant |
| Mount |
Surface Mount |
| hFE Min |
100 |
| Polarity |
NPN |
| Frequency |
100MHz |
| Lead Free |
Lead Free |
| Packaging |
Tape and Reel |
| Termination |
SMD/SMT |
| Package/Case |
SOT-223 |
| RoHS Compliant |
Yes |
| Package Quantity |
1 |
| Power Dissipation |
1.6W |
| Number of Elements |
1 |
| Reach SVHC Compliant |
No |
| Transition Frequency |
100MHz |
| Max Breakdown Voltage |
30V |
| Max Collector Current |
3A |
| Max Power Dissipation |
1.6W |
| Gain Bandwidth Product |
100MHz |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-65°C |
| Emitter Base Voltage (VEBO) |
5V |
| Collector Base Voltage (VCBO) |
40V |
| Collector-emitter Voltage-Max |
400mV |
| Collector Emitter Voltage (VCEO) |
30V |
| Collector Emitter Breakdown Voltage |
30V |