STP100NF04
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Краткое описание:
N-Channel MOSFET, 40V, 120A, 4.6mR Rds(on), TO-220
Дополнительная информация
N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 0.0043 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this device boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 50ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | Automotive, AEC-Q101, STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4.6mR |
| Package/Case | TO-220AB |
| Current Rating | 120A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Package Quantity | 50 |
| Input Capacitance | 5.1nF |
| Power Dissipation | 300W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 35ns |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4.6MR |
| Drain to Source Breakdown Voltage | 40V |
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