STP10N62K3
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Краткое описание:
620V 8.4A N-Channel Power MOSFET TO-220
Дополнительная информация
N-channel power MOSFET featuring 620V drain-source voltage and 8.4A continuous drain current. Offers a low 0.75 ohm drain-source on-resistance and 125W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component boasts fast switching times with a 14.5ns turn-on delay and 31ns fall time. Operating temperature range is -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 31ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 750mR |
| Nominal Vgs | 3.75V |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 1.25nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 14.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 680mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 680mR |
| Drain to Source Breakdown Voltage | 650V |
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