STP10N95K5
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Краткое описание:
950V N-Channel MOSFET, 8A, 0.65 Ohm, TO-220
Дополнительная информация
N-channel Power MOSFET featuring 950V Drain to Source Breakdown Voltage and 8A Continuous Drain Current. This component offers a low 0.65 Ohm typical Drain to Source Resistance and 130W Max Power Dissipation. Designed for through-hole mounting in a TO-220 package, it exhibits fast switching characteristics with a 15ns Fall Time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device is ideal for high-voltage applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 15.75mm |
| Length | 10.4mm |
| Series | SuperMESH5™ |
| Weight | 0.01164oz |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 800mR |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 630pF |
| Power Dissipation | 130W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Turn-Off Delay Time | 51ns |
| Max Power Dissipation | 130W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 950V |
| Drain to Source Breakdown Voltage | 950V |
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