STP10NK60Z
Производится
Увеличить
Краткое описание:
600V 10A N-CH MOSFET TO-220, 0.75 Ohm Rds(on)
Дополнительная информация
N-channel SuperMESH Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 0.65 Ohm typical drain-source on-resistance and 115W maximum power dissipation. This Zener-protected MOSFET is housed in a TO-220 package with through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage and fast switching times with a 30ns fall time. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 750mR |
| Package/Case | TO-220 |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1000 |
| Input Capacitance | 1.37nF |
| Power Dissipation | 115W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 115W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 750mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 750mR |
| Drain to Source Breakdown Voltage | 600V |
